ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Liquid phase epitaxial growth of pure and doped GaSb layers: morphological evolution and native defects

Dutta, PS and Bhat, HL and Kumar, Vikram (1995) Liquid phase epitaxial growth of pure and doped GaSb layers: morphological evolution and native defects. In: Bulletin of Materials Science, 18 (7). pp. 865-874.

[img]
Preview
PDF
Liquid_phase_epitaxial_growth.pdf - Published Version

Download (1285Kb)
Official URL: http://www.springerlink.com/content/8254781533g288...

Abstract

Undoped and Te-doped gallium antimonide (GaSb) layers have been grown on GaSb bulk substrates by the liquid phase epitaxial technique from Ga-rich and Sb-rich melts. The nucleation morphology of the grown layers has been studied as a function of growth temperature and substrate orientation. MOS structures have been fabricated on the epilayers to evaluate the native defect content in the grown layers from the C-V characteristics. Layers grown from antimony rich melts always exhibit p-type conductivity. In contrast, a type conversion from p- to n- was observed in layers grown from gallium rich melts below 400 degrees C. The electron mobility of undoped n-type layers grown from Ga-rich melts and tellurium doped layers grown from Sb- and Ga-rich solutions has been evaluated.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Indian Academy of Sciences.
Keywords: liquid phase epitaxy;growth;GaSb
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 31 May 2011 08:18
Last Modified: 31 May 2011 08:18
URI: http://eprints.iisc.ernet.in/id/eprint/38075

Actions (login required)

View Item View Item