Rajpalke, Mohana K and Roul, Basanta and Kumar, Mahesh and Bhat, Thirumaleshwara N and Sinha, Neeraj and Krupanidhi, SB (2011) Structural and optical properties of nonpolar (11-20) a-plane GaN grown on (1-102) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. In: Scripta Materialia, 65 (1). pp. 33-36.
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We report the structural and optical properties of a-plane GaN film grown on r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. High resolution X-ray diffraction was used to determine the out-of-plane and in-plane epitaxial relation of a-plane GaN to r-plane sapphire. Low-temperature photoluminescence emission was found to be dominated by basal stacking faults along with near-band emission. Raman spectroscopy shows that the a-GaN film is of reasonably good quality and compressively strained. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science.|
|Keywords:||Molecular beam epitaxy;High-resolution X-ray diffraction; Nonpolar GaN;Photoluminescence|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre|
|Date Deposited:||15 Jun 2011 07:13|
|Last Modified:||15 Jun 2011 07:13|
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