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Influence of growth below and above T-c on the morphology and domain structure in flux-grown KTP crystals

Satyanarayan, MN and Bhat, HL (1997) Influence of growth below and above T-c on the morphology and domain structure in flux-grown KTP crystals. In: Journal of Crystal Growth, 181 (3). pp. 281-289.

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Official URL: http://dx.doi.org/10.1016/S0022-0248(97)00148-6

Abstract

KTP crystals have been grown below and above the ferroelectric transition temperature by flux method employing both spontaneous and top-seeded solution growth techniques. A slight morphological difference has been observed in these crystals when grown below and above the T-c. Ferroelectric domains are studied in these crystals by selective domain etching. It is seen that the ferroelectric domains in crystals grown spontaneously below T, show a complicated structure. A systematic investigation of the factors influencing domain structure has been carried out. Stress to some extent has been shown to affect the domain structure. Finally, a convenient way of converting the multidomain crystals into monodomain ones is described.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: KTP;Flux growth;Domain structure;Thermal annealing
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 19 Oct 2011 06:56
Last Modified: 19 Oct 2011 06:56
URI: http://eprints.iisc.ernet.in/id/eprint/38268

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