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Low threshold ovonic switching in a-Si:H/InSb heterostructures

Venkataraghavan, R and Rao, KSRK and Bhat, HL and Pal, S and Dubey, GC (1997) Low threshold ovonic switching in a-Si:H/InSb heterostructures. In: Solid State Communications, 102 (10). 759-762 .

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Official URL: http://dx.doi.org/10.1016/S0038-1098(97)00087-2

Abstract

a-Si:H/InSb structures have been fabricated by glow discharge deposition of a-Si on bulk InSb substrates in hydrogen atmosphere. The structure shows interesting switching properties, toggling between a high resistance and a conducting state with OFF to ON resistance ratio of 10(6) at remarkably low threshold voltages of 0.3 V at room temperature. The low threshold voltage for this structure, as compared to the higher switching threshold of about 30 V for other a-Si based structures, has been achieved by the use of InSb as a substrate, capable of high carrier injection. (C) 1997 Published by Elsevier Science Ltd.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: A.heterojunctions;A.semiconductor;D.tunnelin
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 30 Jun 2011 14:44
Last Modified: 30 Jun 2011 14:44
URI: http://eprints.iisc.ernet.in/id/eprint/38290

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