Sanyal, MK and Datta, A and Banerjee, S and Srivastava, AK and Arora, BM and Kanakaraju, S and Mohan, S (1997) X-ray reflectivity study of semiconductor interfaces. In: Journal of Synchrotron Radiation, 4 (part 3). pp. 185-190.Full text not available from this repository.
The results of an X-ray reflectivity study of thick AlAs-AlGaAs and thin GeSi-Ge multilayers grown using metal-organic vapour-phase epitaxy and ion-beam sputtering deposition techniques, respectively, are presented. Asymmetry in interfaces is observed in both of these semiconductor multilayers. It is also observed that although the Si-on-Ge interface is sharp, an Si0.4Ge0.6 alloy is formed at the Ge-on-Si interface. In the case of the III-V semiconductor, the AlAs-on-AlGaAs interface shows much greater roughness than that observed in the AlGaAs-on-AlAs interface. For thin multilayers it is demonstrated that the compositional profile as a function of depth can be obtained directly from the X-ray reflectivity data.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to International Union of Crystallography.|
|Keywords:||X-ray reflectivity;semiconductor multilayers;interfacial diffusion.|
|Date Deposited:||22 Jun 2011 07:59|
|Last Modified:||22 Jun 2011 07:59|
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