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Antiferroelectric lead zirconate thin films by pulsed laser ablation

Bharadwaja, SSN and Krupanidhi, SB (1999) Antiferroelectric lead zirconate thin films by pulsed laser ablation. In: Materials Science and Engineering B, 64 (1). 54-59 .

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Official URL: http://dx.doi.org/10.1016/S0921-5107(99)00163-4

Abstract

Lead Zirconate (PbZrO3) thin films were deposited by pulsed laser ablation method. Pseudocubic (110) oriented in-situ films were grown at low pressure. The field enforced anti-ferroelectric (AFE) to ferroelectric (FE) phase transformation behaviour was investigated by means of a modified Sawyer Tower circuit as well as capacitance versus applied voltage measurements. The maximum polarisation obtained was 36 mu C cm(-2) and the critical field to induce ferroelectric state and to reverse the antiferroelectric slates were 65 and 90 kV cm(-1) respectively. The dielectric properties were investigated as a function of frequency and temperature. The dielectric constant of the AFE lead zirconate thin him was 190 at 100 kHz which is more than the bulk ceramic value (120) with a dissipation factor of less than 0.07. The polarisation switching kinetics of the antiferroelectric PbZrO3 thin films showed that the switching time to be around 275 ns between antipolar state to polar states. (C) 1999 Elsevier Science S.A. All rights reserved.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Antiferroelectric;Lead zirconate;Pulsed laser ablation
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 23 Jun 2011 05:24
Last Modified: 23 Jun 2011 05:24
URI: http://eprints.iisc.ernet.in/id/eprint/38579

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