ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Si incorporation and Burstein-Moss shift in n-type GaAs

Hudait, MK and Modak, P and Krupanidhi, SB (1999) Si incorporation and Burstein-Moss shift in n-type GaAs. In: Materials Science and Engineering B, 60 (1). pp. 1-11.

[img] PDF
Si_incorporation_and_Burstein.pdf - Published Version
Restricted to Registered users only

Download (214Kb) | Request a copy
Official URL: http://dx.doi.org/10.1016/S0921-5107(99)00016-1

Abstract

Silane (SiH4) was used as an n-type dopant in GaAs grown by low pressure metalorganic vapor phase epitaxy using trimethylgallium (TMGa) and arsine (AsH3) as source materials. The electron carrier concentrations and silicon (Si) incorporation efficiency are studied by using Hall effect, electrochemical capacitance voltage profiler and low temperature photoluminescence (LTPL) spectroscopy. The influence of growth parameters, such as SiH4 mole fraction, growth temperature, TMGa and AsH3 mole fractions on the Si incorporation efficiency have been studied. The electron concentration increases with increasing SIH4 mole fraction, growth temperature, and decreases with increasing TMGa and AsH3 mole fractions. The decrease in electron concentration with increasing TMGa can be explained by vacancy control model. The PL experiments were carried out as a function of electron concentration (10(17) - 1.5 x 10(18) cm(-3)). The PL main peak shifts to higher energy and the full width at half maximum (FWHM) increases with increasing electron concentrations. We have obtained an empirical relation for FWHM of PL, Delta E(n) (eV) = 1.4 x 10(-8) n(1/3). We also obtained an empirical relation for the band gap shrinkage, Delta E-g in Si-doped GaAs as a function of electron concentration. The value of Delta E-g (eV) = -2.75 x 10(-8) n(1/3), indicates a significant band gap shrinkage at high doping levels. These relations are considered to provide a useful tool to determine the electron concentration in Si-doped GaAs by low temperature PL measurement. The electron concentration decreases with increasing TMGa and AsH3 mole fractions and the main peak shifts to the lower energy side. The peak shifts towards the lower energy side with increasing TMGa variation can also be explained by vacancy control model. (C) 1999 Elsevier Science S.A. All rights reserved.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Gallium arsenide;Optical properties;Photoluminescence; Semiconductors
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 30 Jun 2011 08:29
Last Modified: 30 Jun 2011 08:29
URI: http://eprints.iisc.ernet.in/id/eprint/38764

Actions (login required)

View Item View Item