Rangaiah, SVP and Reddy, SV and Reddy, PN and Salkalachas, S and Rao, KSRK and Reddy, BPN (1998) Studies on process induced deep levels in silicon. In: Bulletin of Electrochemistry, 14 (11). pp. 394-397.Full text not available from this repository.
An attempt was made to study the deep level impurities and defects introduced into thyristor grade silicon under different processing conditions. DLTS, C-V and I-V measurements were carried out. The ideality factors of the diodes is around 1-7. Activation energy, trap density and minority carrier lifetime were measured.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Scientific Publishers.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||12 Jul 2011 07:54|
|Last Modified:||12 Jul 2011 07:54|
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