Acharya, KV and Asokan, S and Panchapagesan, TS (1999) Thermal crystallization behaviour of Ge-Te-Se glasses. In: Indian Journal of Pure & Applied Physics, 37 (11). pp. 823-827.Full text not available from this repository.
Ge10Te90-xSex (50 less than or equal to x less than or equal to 70) and Ge20Te80-xSex (x = 30, 50) glasses have been prepared by melt-quenching The thermal crystallization behaviour of these samples has been studied by Differential Scanning Calorimetry (DSC), in order to characterise these glasses for memory-threshold switching applications. It is found that Ge10Te90-xSex glasses have higher thermal stability and are more stable against devitrification. These samples may be suitable for threshold switching devices. Ge20Te80-xSex glasses, on the other hand, phase separate on heating and exhibit a double stage crystallization. Based on this, it can be expected that Ge20Te80-xSex samples will show memory behaviour. The activation energy for thermal crystallization of a representative Ge10Te40-xSe50 glass belonging to the Ge10Te90-xSex series has been found by the Kissinger's method to be 0.92 eV. The value of the activation energy obtained also indicates that Ge10Te90-xSex samples are less prone to devitrification and more suitable for threshold behaviour.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to National Institute of Science Communication and Information Resources.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)|
|Date Deposited:||03 Aug 2011 09:53|
|Last Modified:||03 Aug 2011 09:53|
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