Okabayashi, J and Mizokawa, T and Sarma, DD and Fujimori, A (2002) Electronic structure of In1-xMnxAs studied by photoemission spectroscopy: Comparison with Ga1-xMnxAs. In: Physical Review B: Condensed Matter and Materials Physics, 65 (16). p. 161203.
Electronic_structure.pdf - Published Version
Restricted to Registered users only
Download (79Kb) | Request a copy
We have investigated the electronic structure of the p-type diluted magnetic semiconductor In1-xMnxAs by photoemission spectroscopy. The Mn 3d partial density of states is found to be basically similar to that of Ga1-xMnxAs. However, the impurity-band-like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga1-xMnxAs. This difference would explain the difference in transport, magnetic and optical properties of In1-xMnxAs and Ga1-xMnxAs. The different electronic structures are attributed to the weaker Mn 3d-As 4p hybridization in In1-xMnxAs than in Ga1-xMnxAs.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to The American Physical Society.|
|Department/Centre:||Division of Chemical Sciences > Solid State & Structural Chemistry Unit|
|Date Deposited:||20 Jul 2011 06:01|
|Last Modified:||20 Jul 2011 06:01|
Actions (login required)