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Metal-organic chemical vapour deposition of thin films of cobalt on different substrates: study of microstructure

Paranjape, Mandar A and Mane, Anil U and Raychaudhuri, AK and Shalinib, K and Shivashankar, SA and Chakravarty, BR (2002) Metal-organic chemical vapour deposition of thin films of cobalt on different substrates: study of microstructure. In: Thin Solid Films, 413 (1-2). pp. 8-15.

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Official URL: http://dx.doi.org/10.1016/S0040-6090(02)00446-7

Abstract

We have investigated the microstructure of thin films grown by metal-organic chemical vapour deposition using a beta-diketonate complex of cobalt, namely cobalt (11) acetylacetonate. Films were deposited on three different substrates: Si(100), thermally oxidised silicon [SiO2/Si(100)] and glass at the same time. As-grown films were characterised by X-ray diffraction, scanning electron microscopy, scanning tunnelling microscopy, atomic force microscopy and secondary ion mass spectrometry. Electrical resistivity was measured for all the films as a function of temperature. We found that films have very fine grains, resulting in high electrical resistivity Further, film microstructure has a strong dependence on the nature of the substrate and there is diffusion of silicon and oxygen into cobalt from the substrate. (C) 2002 Elsevier Science B.V. All rights reserved.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Cobalt;Thin films;Metal–organic chemical vapour deposition (MOCVD);Secondary ion mass spectrometry (SIMS)
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 20 Jul 2011 06:39
Last Modified: 20 Jul 2011 06:39
URI: http://eprints.iisc.ernet.in/id/eprint/39278

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