Paranjape, Mandar A and Mane, Anil U and Raychaudhuri, AK and Shalinib, K and Shivashankar, SA and Chakravarty, BR (2002) Metal-organic chemical vapour deposition of thin films of cobalt on different substrates: study of microstructure. In: Thin Solid Films, 413 (1-2). pp. 8-15.
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We have investigated the microstructure of thin films grown by metal-organic chemical vapour deposition using a beta-diketonate complex of cobalt, namely cobalt (11) acetylacetonate. Films were deposited on three different substrates: Si(100), thermally oxidised silicon [SiO2/Si(100)] and glass at the same time. As-grown films were characterised by X-ray diffraction, scanning electron microscopy, scanning tunnelling microscopy, atomic force microscopy and secondary ion mass spectrometry. Electrical resistivity was measured for all the films as a function of temperature. We found that films have very fine grains, resulting in high electrical resistivity Further, film microstructure has a strong dependence on the nature of the substrate and there is diffusion of silicon and oxygen into cobalt from the substrate. (C) 2002 Elsevier Science B.V. All rights reserved.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science.|
|Keywords:||Cobalt;Thin films;Metal–organic chemical vapour deposition (MOCVD);Secondary ion mass spectrometry (SIMS)|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre
Division of Physical & Mathematical Sciences > Physics
|Date Deposited:||20 Jul 2011 06:39|
|Last Modified:||20 Jul 2011 06:39|
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