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MOCVD of aluminium oxide films using aluminiurn beta-diketonates as precursors

Devi, A and Shivashankar, SA and Samuelson, AG (2002) MOCVD of aluminium oxide films using aluminiurn beta-diketonates as precursors. In: Journal de Physique IV - Proceedings, 12 (PR4). 139-146 .

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Official URL: http://jp4.journaldephysique.org/index.php?option=...

Abstract

Deposition of Al2O3 coatings by CVD is of importance because they are often used as abrading material in cemented carbide cutting tools. The conventionally used CVD process for Al2O3 involves the corrosive reactant AlCl3. In this paper, we report on the thermal characterisation of the metalorganic precursors namely aluminium tristetramethyl-heptanedionate [Al(thd)(3)] and aluminium tris-acetylacetonate [Al(acac)(3)] and their application to the CVD of Al2O3 films. Crystalline Al2O3 films were deposited by MOCVD at low temperatures by the pyrolysis of Al(thd)(3) and Al(acac)(3). The films were deposited on a TiN-coated tungsten carbide (TiN/WC) and Si(100) substrates in the temperature range 500-1100degreesC. The as-deposited films were characterised by x-ray diffraction, optical microscopy, scanning and transmission electron microscopy, Auger electron spectroscopy. The observed crystallinity of films grown at low temperatures, their microstructure, and composition may be interpreted in terms of a growth process that involves the melting of the metalorganic precursor on the hot growth surface.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to EDP Sciences.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 20 Jul 2011 09:07
Last Modified: 20 Jul 2011 09:07
URI: http://eprints.iisc.ernet.in/id/eprint/39286

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