Hudait, MK and Krupanidhi, SB (2002) Optimization of off-oriented Ge substrates for MOVPE-grown GaAs solar cells. In: Defect and Diffusion Forum, 210-2 . pp. 15-20.
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GaAs/Ge heterostructures having abrupt interfaces were grown on 2degrees, 6degrees, and 9degrees off-cut Ge substrates and investigated by cross-sectional high-resolution transmission electron microscopy (HRTEM), scanning electron microscopy, photoluminescence spectroscopy and electrochemical capacitance voltage (ECV) profiler. The GaAs films were grown on off-oriented Ge substrates with growth temperature in the range of 600-700degreesC, growth rate of 3-12 mum/hr and a V/III ratio of 29-88. The lattice indexing of HRTEM exhibits an excellent lattice line matching between GaAs and Ge substrate. The PL spectra from GaAs layer on 6degrees off-cut Ge substrate shows the higher excitonic peak compared with 2degrees and 9degrees off-cut Ge substrates. In addition, the luminescence intensity from the GaAs solar cell grown on 6degrees off-cut is higher than on 9degrees off-cut Ge substrates and signifies the potential use of 6degrees off-cut Ge substrate in the GaAs solar cells industry. The ECV profiling shows an abrupt film/substrate interface as well as between various layers of the solar cell structures.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Trans Tech Publications Inc.|
|Keywords:||off-oriented Ge substrates;GaAs;MOVPE;photoluminescence|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre|
|Date Deposited:||21 Jul 2011 07:06|
|Last Modified:||21 Jul 2011 07:06|
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