Rao, Narasimha K (2002) Preparation of transparent conductive oxide films by activated reactive evaporation. In: Optical Engineering, 41 (11). pp. 2705-2706.Full text not available from this repository. (Request a copy)
Indium-tin oxide films have been deposited by reactive electron beam evaporation of ln+Sn alloy both in neutral and ionized oxygen environments. A low-energy ion source (fabricated in-house) has been used. Films deposited with neutral oxygen exhibited very low optical transmittance (5% at 550 nm). Highly transparent (85%) and low-resistivity (5 X 10(-4) Omega cm) films have been deposited in ionized oxygen at ambient substrate temperature. Optical and electrical properties of the films have been studied as a function of deposition parameters. (C) 2002 Society of Photo-Optical Instrumentation Engineers.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to The International Society for Optical Engineering.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)|
|Date Deposited:||22 Jul 2011 09:28|
|Last Modified:||22 Jul 2011 09:28|
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