Venkateswarlu, P and Victor, P and Krupanidhi, SB (2002) Study of thickness dependence on electrical properties of (Pb,La)TiO3 thin films for memory applications. In: Integrated Ferroelectrics, 46 (1). pp. 133-141.Full text not available from this repository.
Lead-lanthanum-titanate (Pb0.72La0.28)TiO3 (PLT) is one of the interesting materials for DRAM applications due to its room temperature paraelectric nature and its higher dielectric permittivity. PLT thin films of different thickness ranging from 0.54- 0.9 mum were deposited on Pt coated Si substrates by excimer laser ablation technique. We have measured the voltage (field) dependence, the thickness dependence, temperature dependence of dc leakage currents and analysis is done on these PLT thin films. Current- voltage characteristics were measured at different temperatures for different thick films and the thickness dependence of leakage current has been explained by considering space charge limited conduction mechanism. The charge transport phenomena were studied in detail for films of different thicknesses for dynamic random access memory applications.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Taylor and Francis Group.|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre|
|Date Deposited:||28 Jul 2011 05:29|
|Last Modified:||28 Jul 2011 05:29|
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