ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

The thickness dependence of the electrical and dielectric properties in the laser ablated SrBi2Nb2O9 thin films

Bhattacharyya, S and Victor, P and Laha, A and Krupanidhi, SB (2002) The thickness dependence of the electrical and dielectric properties in the laser ablated SrBi2Nb2O9 thin films. In: Integrated Ferroelectrics, 50 . pp. 159-169.

Full text not available from this repository.
Official URL: http://www.tandfonline.com/doi/abs/10.1080/1058458...

Abstract

he thickness dependence of the electrical properties in the thin films of uniaxial SrBi2Nb2O9 has been studied in this report. According to many published literatures, it could be an effective way to identify the basic conduction process. The laser ablation was chosen as the deposition technique to ensure an oriented growth and a proper stoichiometric deposition. The structural, dielectric and conduction properties were studied as a function of thickness. The films showed good ferroelectric properties, an ordered growth, and a space-charge controlled conduction process, which was double checked by reversing the polarity of the applied voltage, and also by examining the high field current response of the sample varying in thickness.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Taylor and Francis Group.
Department/Centre: Others
Date Deposited: 27 Jul 2011 09:57
Last Modified: 27 Jul 2011 09:57
URI: http://eprints.iisc.ernet.in/id/eprint/39497

Actions (login required)

View Item View Item