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Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures

Hudait, MK and Venkateswarlu, P and Krupanidhi, SB (2001) Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures. In: Solid-State Electronics, 45 (1). pp. 133-141.

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Official URL: http://dx.doi.org/10.1016/S0038-1101(00)00230-6

Abstract

The current�voltage characteristics of Au/n-GaAs Schottky diodes grown by metal-organic vapor-phase epitaxy on Ge substrates were determined in the temperature range 80�300 K. The zero-bias barrier height for current transport decreases and the ideality factor increases at low temperatures. The ideality factor was found to show the T0 effect and a higher characteristic energy. The excellent matching between the homogeneous barrier height and the effective barrier height was observed and infer good quality of the GaAs film. No generation�recombination current due to deep levels arising during the GaAs/Ge heteroepitaxy was observed in this study. The value of the Richardson constant was found to be 7.04 A K?2 cm?2, which is close to the value used for the determination of the zero-bias barrier height.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: GaAS;Schottky diodes;MOVPE;Ge.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 02 Aug 2011 06:40
Last Modified: 02 Aug 2011 06:40
URI: http://eprints.iisc.ernet.in/id/eprint/39540

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