Murugavel, S and Asokan, S (1998) Composition tunable memory and threshold switching in Al20As xTe80− x semiconducting glasses. In: Journal of Materials Research, 13 (10). pp. 2982-2987.Full text not available from this repository.
I-V studies indicate a composition dependent switching behavior (Memory or Threshold) in bulk Al20AsxTe80−x glasses, which is determined by the coordination and composition of aluminum. Investigations on temperature and thickness dependence of switching and structural studies on switched samples suggest thermal and electronic mechanisms of switching for the memory and threshold samples, respectively. The present results also show that these samples have a wider composition range of threshold behavior with lower threshold voltages compared to other threshold samples.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Cambridge University Press.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)|
|Date Deposited:||19 Aug 2011 10:57|
|Last Modified:||19 Aug 2011 10:57|
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