Hudait, Mantu Kumar and Modak, Prasanta and Krupanidhi, SB (1996) Growth and Characterization of GaAs Epitaxial Layers by MOCVD. In: MRS Proceedings, 421 .Full text not available from this repository.
technique, on both semi-insulating and semi-conducting CraAs substrates with (100) orientation, offset by 2° towards (110) direction. Systematic variation of As/Ga was performed to gain an understanding of growth process, type of formation and other related physical properties. The films were characterized by using the variety of techniques, such as SEM, EDAX, HRTEM, XRD, and PL. Optical and electrical properties of undoped CyaAs epilayers are presented with reference to the growth conditions and AsH3/TMGa ratio. Photoluminescence measurements of GaAs epilayers were recorded at 4.2K and shows the emission of free exciton and confirmed their high purity. The dominant residual impurities in GaAs are presented by using PL. Finally, electrochemical depth profiling exhibited almost homogeneous background carrier distribution and excellent abruptness between the thin GaAs epilayer and substrate.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Cambridge University Press.|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre|
|Date Deposited:||18 Aug 2011 07:29|
|Last Modified:||18 Aug 2011 07:29|
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