Dutta, PS and Bhat, HL and Kumar, Vikram and Dieguez, E (1995) Morphological Evolution and Properties of LPE Grown GaSb, AlGaSb and AlGaAsSb. In: MRS Proceedings, 399 . p. 153.Full text not available from this repository.
The nucleation morphologies of LPE grown GaSb, AlGaSb and AlGaAsSb layers on GaSb substrates are presented. The morphology of the GaSb layers grown from Sb-rich melts showed facets on highly terraced surface, whereas those grown from Ga-rich melts exhibited fine terraces without facets. An optimum temperature in the range of 500 – 550°C was found to be suitable for the growth of mirror smooth layers from Ga-melts. The surface morphology of the AlxGa1-xSb layers degrades drastically with increase in Al content beyond x = 0.5. The surface morphology of AlGaAsSb epilayers has been found to depend strongly on the pre-growth melt dissolution sequence.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Cambridge University Press.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||19 Aug 2011 10:03|
|Last Modified:||19 Aug 2011 10:03|
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