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Morphological Evolution and Properties of LPE Grown GaSb, AlGaSb and AlGaAsSb

Dutta, PS and Bhat, HL and Kumar, Vikram and Dieguez, E (1995) Morphological Evolution and Properties of LPE Grown GaSb, AlGaSb and AlGaAsSb. In: MRS Proceedings, 399 . p. 153.

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Abstract

The nucleation morphologies of LPE grown GaSb, AlGaSb and AlGaAsSb layers on GaSb substrates are presented. The morphology of the GaSb layers grown from Sb-rich melts showed facets on highly terraced surface, whereas those grown from Ga-rich melts exhibited fine terraces without facets. An optimum temperature in the range of 500 – 550°C was found to be suitable for the growth of mirror smooth layers from Ga-melts. The surface morphology of the AlxGa1-xSb layers degrades drastically with increase in Al content beyond x = 0.5. The surface morphology of AlGaAsSb epilayers has been found to depend strongly on the pre-growth melt dissolution sequence.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Cambridge University Press.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 19 Aug 2011 10:03
Last Modified: 19 Aug 2011 10:03
URI: http://eprints.iisc.ernet.in/id/eprint/39985

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