Bysakh, Sandip and Mitsuishi, Kazutaka and Song, Minghui and Furuya, Kazuo and Chattopadhyay, Kamanio (2011) Formation of amorphous xenon nanoclusters and microstructure evolution in pulsed laser deposited Ti62.5Si37.5 thin films during Xe ion irradiation. In: Journal of Materials Research, 26 . 62-69 .Full text not available from this repository.
As deposited amorphous and crystallized thin films of Ti 37.5% Si alloy deposited by pulsed laser ablation technique were irradiated with 100 keV Xe+ ion beam to an ion fluence of about 1016 ions-cm−2. Transmission electron microscopy revealed that the implanted Xe formed amorphous nanosized clusters in both cases. The Xe ion-irradiation favors nucleation of a fcc-Ti(Si) phase in amorphous films. However, in crystalline films, irradiation leads to dissolution of the Ti5Si3 intermetallic phase. In both cases, Xe irradiation leads to the evolution of similar microstructures. Our results point to the pivotal role of nucleation in the evolution of the microstructure under the condition of ion implantation.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Cambridge University Press.|
|Department/Centre:||Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)|
|Date Deposited:||19 Aug 2011 09:57|
|Last Modified:||19 Aug 2011 09:57|
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