Pal, U and Piqueras, J and Dutta, PS and Bhat, HL and Dubey, GC and Kumar, Vikram and Dieguez, E (2008) Cathodoluminescence Spectroscopy For Evaluation Of Defect Passivation In GaSb. In: MRS Proceedings, 42 (1). pp. 92-99.Full text not available from this repository.
Cathodoluminescence (CL) technique has been employed to study the optical properties of GaSb after deposition of hydrogenated amorphous silicon (a-Si:H). CL images recorded at various depths in the samples clearly show passivation of extended defects on the surface as well as in the bulk region. The passivation of various recombination centres in the bulk is attributed to formation of hydrogen-impurity complexes by diffusion of hydrogen ions from the plasma. Enhancement in luminescence intensity is seen due to passivation of non-radiative recombination centres. The passivation efficiency is found to improve with increase in a-Si:H deposition temperature.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Cambridge University Press.|
|Department/Centre:||Division of Biological Sciences > Centre for Ecological Sciences|
|Date Deposited:||17 Aug 2011 06:46|
|Last Modified:||17 Aug 2011 06:46|
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