Sato, K and Medvedkin, GA and Ishibashi, T and Mitani, S and Takanashi, K and Ishida, Y and Sarma, DD and Okabayashi, J and Fujimori, A and Kamatani, T and Akai, H (2003) Novel Mn-doped chalcopyrites. In: Journal of Physics and Chemistry of Solids, 64 (9-10). pp. 1461-1468.
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Heavily Mn-doped II-VI-V-2 semiconductors, such as CdGeP2 and ZnGeP2 have been prepared by depositing Mn on single crystalline substrate at nearly 400 T in an ultra high vacuum chamber. Well-defined ferromagnetic hysteresis with a saturation behavior appears in the magnetization curve up to above room temperature. The chemical states of the ZDGeP(2):Mn interface has been clarified by a careful in situ photoemission spectroscopy. The as-prepared surface consists of Ge-rich, metallic Mn compound. In and below the sub-surface region, dilute divalent Mn species as precursors of the DMS phase exist. No MnP phase was observed at any stage of the depth profile. Theoretical band-calculation suggests that the system with vacancies (Cd, V-c, Mn)GeP2 or a non-stoichiometric (Cd, Ge, Mn)GeP2 are ferromagnetic and energetically stable although ferromagnetism is not stable in a stoichiometric compound (Cd, Mn)GeP2. (C) 2003 Elsevier Ltd. All rights reserved.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science.|
|Keywords:||C.Photoelectron spectroscopy;C. Ab initio calculation|
|Date Deposited:||25 Aug 2011 09:38|
|Last Modified:||25 Aug 2011 09:38|
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