Measurement of silicon and GaAs/Ge solar cell device parameters

Deshmukh, MP and Nagaraju, J (2005) Measurement of silicon and GaAs/Ge solar cell device parameters. In: Solar Energy Materials and Solar Cells, 89 (4). pp. 403-408.

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Abstract

The device parameters (carrier lifetime, ideality factor), and physical parameters (built-in voltage, doping concentration) of silicon (Si) and gallium arsenide (GaAs/Ge) solar cells are measured at different temperatures using time domain technique. Carrier lifetime is calculated from open circuit voltage decay (OCVD). Built-in voltage and doping concentration are derived from the cell capacitance measured at different bias voltages. Ideality factor is derived from the I-V characteristics of solar cell. Carrier lifetime increases while built-in voltage decreases with increase in temperature. Ideality factor of the solar cell decreases with temperature.

Item Type:	Journal Article
Additional Information:	Copyright for this article belongs to Elsevier.
Keywords:	Si and GaAs/Ge solar cells;Device parameters;Temperature
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Date Deposited:	09 Mar 2006
Last Modified:	19 Sep 2010 04:21
URI:	http://eprints.iisc.ernet.in/id/eprint/4032

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