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Microwave ECR Plasma Assisted MOCVD of Y(2)O(3) Thin Films Using Y(tod)(3) Precursor and Their Characterization

Barve, Shruti and Deo, Mukul and Kar, Rajib and Sreenivasan, Nimisha and Kishore, Ramaswamy and Biswas, Arup and Bhanage, Bhalchandra and Rao, Mohan and Gantayet, Lalit Mohan and Patil, Dinkar (2011) Microwave ECR Plasma Assisted MOCVD of Y(2)O(3) Thin Films Using Y(tod)(3) Precursor and Their Characterization. In: Plasma Processes and Polymers, 8 (8). pp. 740-749.

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Official URL: http://onlinelibrary.wiley.com/doi/10.1002/ppap.20...

Abstract

Yttrium oxide (Y(2)O(3)) thin films were deposited by microwave electron cyclotron resonance (ECR) plasma assisted metal organic chemical vapour deposition (MOCVD) process using indigenously developed metal organic precursors Yttrium 2,7,7-trimethyl-3,5-octanedionates, commonly known as Y(tod)(3) which were synthesized by an ultrasound method. A series of thin films were deposited by varying the oxygen flow rate from 1-9 sccm, keeping all other parameters constant. The deposited coatings were characterized by X-ray photoelectron spectroscopy, glancing angle X-ray diffraction and infrared spectroscopy. Thickness and roughness for the films were measured by stylus profilometry. Optical properties of the coatings were studied by the spectroscopic ellipsometry. Hardness and elastic modulus of the films were measured by nanoindentation technique. Being that microwave ECR CVD process is operating-pressure-sensitive, optimum oxygen activity is very essential for a fixed flow rate of precursor, in order to get a single phase cubic yttrium oxide in the films. To the best of our knowledge, this is the first effort that describes the use of Y(tod)(3) precursor for deposition of Y(2)O(3) films using plasma assisted CVD process.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to John Wiley and Sons.
Keywords: electron cyclotron resonance (ECR);low-pressure discharges; oxides;plasma-enhanced chemical vapor deposition (PECVD); thin films
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Date Deposited: 20 Sep 2011 08:37
Last Modified: 28 Sep 2011 06:41
URI: http://eprints.iisc.ernet.in/id/eprint/40548

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