Kumar, Mahesh and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Roul, Basanta and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Study of band offsets in InN/Ge heterojunctions. In: Surface Science, 605 (15-16). L33-L37.
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InN layers were directly grown on Ge substrate by plasma-assisted molecular beam epitaxy (PAMBE). The valence band offset (VBO) of wurtzite InN/Ge heterojunction is determined by X-ray photoemission spectroscopy (XPS). The valence band of Ge is found to be 0.18 +/- 0.04 eV above that of InN and a type-II heterojunction with a conduction band offset (CBO) of similar to 0.16 eV is found. The accurate determination of the VBO and CBO is important for the design of InN/Ge based electronic devices. (C) 2011 Elsevier B.A. All rights reserved.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science B.V.|
|Keywords:||Molecular beam epitaxy;Indium nitride;Heterojunction;X-ray photoemission spectroscopy|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre|
|Date Deposited:||16 Sep 2011 09:10|
|Last Modified:||16 Sep 2011 09:10|
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