Chitara, Basant and Lal, Nidhi and Krupanidhi, SB and Rao, CNR (2011) Electroluminescence from GaN-polymer heterojunction. In: Journal of Luminescence, 131 (12). pp. 2612-2615.
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Inorganic and organic semiconductor devices are generally viewed as distinct and separate technologies. Herein we report a hybrid inorganic-organic light-emitting device employing the use of an air stable polymer, Poly (9,9-dioctylfluorene-alt-benzothiadiazole) as a p-type layer to create a heterojunction, avoiding the use of p-type GaN, which is difficult to grow, being prone to the complex and expensive fabrication techniques that characterises it. I-V characteristics of the GaN-polymer heterojunction fabricated by us exhibits excellent rectification. The luminescence onset voltage is typically about 8-10 V. The device emits yellowish white electroluminescence with CIE coordinates (0.42, 0.44). (C) 2011 Elsevier B.V. All rights reserved.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science B.V.|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre|
|Date Deposited:||30 Sep 2011 06:07|
|Last Modified:||30 Sep 2011 06:07|
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