Narasimha Rao, K and Sarvanan, TR and Rajeev, K and Mukherjee, C (2009) Studies on the deposition and characterization of silicon oxide films for optical coating applications. In: Proc. Of International conference on Optics and Photonics, 30th Oct.-1st Nov, 2009, Chandigargh, India.
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Silicon oxide films were deposited by reactive evaporation of SiO. Parameters such as oxygen partial pressure and substrate temperature were varied to get variable and graded index films. Films with a refractive index in the range 1.718 to 1.465 at 550 nm have been successfully deposited. Films deposited using ionized oxygen has the refractive index 1.465 at 550 nm and good UV transmittance like bulk fused quartz. Preparation of graded index films was also investigated by changing the oxygen partial pressure during deposition. A two layer antireflection coating at 1064nm has been designed using both homogeneous and inhomogeneous films and studied their characteristics.
|Item Type:||Conference Paper|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)|
|Date Deposited:||16 Dec 2011 08:39|
|Last Modified:||16 Dec 2011 08:41|
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