Patel, Nayan B and Ramesha, A and Mahapatra, Santanu (2008) Performance Enhancement of the Tunnel Field Effect Transistor using SiGe Source. In: International Workshop on Physics of Semiconductor Devices, 2007. IWPSD 2007., 16-20 Dec. 2007 , Mumbai.
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Due to extremely low off state current (IOFF) and excellent sub-threshold characteristics, the tunnel field effect transistor (TFET) has attracted a lot of attention for low standby power applications. In this work, we aim to increase the on state current (ION) of the device. A novel device architecture with a SiGe source is proposed. The proposed structure shows an order of improvement in ION compared to the conventional Si structure. A process flow adaptable to conventional CMOS technology is also addressed.
|Item Type:||Conference Paper|
|Additional Information:||Copyright 2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Keywords:||Sub-threshold swing, band to band tunneling;gated p-i-n diode;tunnel field effect transistor (TFET);device simulation|
|Department/Centre:||Division of Electrical Sciences > Electronic Systems Engineering (Formerly, (CEDT) Centre for Electronic Design & Technology)|
|Date Deposited:||11 Oct 2011 08:50|
|Last Modified:||11 Oct 2011 08:50|
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