Ray, Biswajit and Shubhakar, * and Mahapatra, Santanu (2008) Necessity for quatum simulation for future technology nodes. In: International Workshop on Physics for Semi-conductor Devices, 16-20 Dec. 2007 , Mumbai.
Necessity.pdf - Published Version
Restricted to Registered users only
Download (104Kb) | Request a copy
In this paper we present and compare the results obtained from semi-classical and quantum mechanical simulation for a double gate MOSFET structure to analyze the electrostatics and carrier dynamics of this device. The geometries like gate length, body thickness of this device have been chosen according to the ITRS specification for the different technology nodes. We have shown the extent of deviation between the semi- classical and quantum mechanical results and hence the need of quantum simulations for the promising nanoscale devices in the future technology nodes predicted in ITRS.
|Item Type:||Conference Paper|
|Additional Information:||Copyright 2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Keywords:||Double Gate MOSFET;International Technology Roadmap for Semiconductor (ITRS);Boltzmann’s Transport Equation;Non Equilibrium Green’s Function Method .|
|Department/Centre:||Division of Electrical Sciences > Electronic Systems Engineering (Formerly, (CEDT) Centre for Electronic Design & Technology)|
|Date Deposited:||11 Oct 2011 09:09|
|Last Modified:||11 Oct 2011 09:09|
Actions (login required)