Naik, Ramakanta and Kumar, C and Ganesan, R and Sangunni, KS (2011) Effect of Te addition on the optical properties of As(2)S(3) thin film. In: Materials Chemistry and Physics, 130 (1-2). pp. 750-754.
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Bilayer thin films of Te/As(2)S(3) were prepared from Te and As(2)S(3) by thermal technique under high vacuum. Optical constants were calculated by analysing the transmission spectrum in the spectral range 400-1100 nm. The optical band gap decreases with the addition of Te to As(2)S(3). The decrease of optical band gap has been explained on the basis of density of states and the increase in disorder in the system. We have irradiated the as-deposited films using a diode pumped solid state laser of 532 nm wavelength to study photo-diffusion of Te into As(2)S(3). The changes were characterised by Fourier Transform Infrared and X-ray Photoelectron Spectroscopy (XPS). The optical band gap is found to be decreased with the light irradiation which is proposed due to homopolar bond formation. The core level peaks in XPS spectra give information about different bond formation. (C) 2011 Elsevier B.V. All rights reserved.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science.|
|Keywords:||Amorphous materials;Fourier Transform Infrared Spectroscopy (FTIR);Photoelectron spectroscopy;Optical properties|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||17 Nov 2011 09:05|
|Last Modified:||17 Nov 2011 09:05|
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