Vishwas, M and Rao, Narasimha K and Gowda, Arjuna KV and Chakradhar, RPS (2011) Optical, electrical and dielectric properties of TiO(2)-SiO(2) films prepared by a cost effective sol-gel process. In: Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 83 (1). pp. 614-617.
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Titanium dioxide (TiO(2)) and silicon dioxide (SiO(2)) thin films and their mixed films were synthesized by the sol-gel spin coating method using titanium tetra isopropoxide (TTIP) and tetra ethyl ortho silicate (TEOS) as the precursor materials for TiO(2) and SiO(2) respectively. The pure and composite films of TiO(2) and SiO(2) were deposited on glass and silicon substrates. The optical properties were studied for different compositions of TiO(2) and SiO(2) sols and the refractive index and optical band gap energies were estimated. MOS capacitors were fabricated using TiO(2) films on p-silicon (1 0 0) substrates. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were studied and the electrical resistivity and dielectric constant were estimated for the films annealed at 200 degrees C for their possible use in optoelectronic applications. (C) 2011 Elsevier B.V. All rights reserved.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science.|
|Keywords:||TiO(2)-SiO(2);Composites;Sol-gel;MOS capacitor;I-V, C-V|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)|
|Date Deposited:||21 Dec 2011 09:15|
|Last Modified:||21 Dec 2011 09:15|
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