Bansal, Bhavtosh and Venkataraman, V and Bhat, HL and Dixit, VK (2003) Temperature dependence of the energy gap and free carrier absorption in bulk InAs0.05Sb0.95 single crystals. In: Applied Physics Letters, 82 (26). pp. 4720-4722.
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Temperature dependence of the energy gap and free carrier absorption in a high-quality InAs0.05Sb0.95 single crystal was studied between 90 K and 430 K through the absorption spectra. At this alloy concentration, the room-temperature energy gap was measured to be 0.15 eV. Varshni- and the Bose–Einstein-type fit parameters were obtained from the measured temperature dependence of the energy gap, and the latter gave the zero-temperature gap to be 0.214 eV. It was found that although Weider’s empirical formula for the dependence of the energy gap on temperature and the alloy concentration agrees with the value of the gap at room temperature, it is inaccurate in describing its temperature dependence. From the free carrier absorption measurements, the phonon limited cross section of 7.35×10−16 cm2 at 15 μm was deduced at room temperature.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Institute of Physics.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||23 Dec 2011 07:06|
|Last Modified:||23 Dec 2011 07:06|
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