Sambandan, Sanjiv (2011) Influence of Gate Corrugations on the Performance of Thin-Film Transistors. In: IEEE Electron Device Letters, Jan. 2012.
Influence_of_Gate.pdf - Published Version
Restricted to Registered users only
Download (461Kb) | Request a copy
This letter investigates the influence of a corrugated gate on the transfer characteristics of thin-film transistors. Corrugations that run parallel to the length of the channel from source to drain are patterned on the gate. The author finds that these corrugations result in higher currents as compared to conventional planar-gate transistors.
|Item Type:||Conference Paper|
|Additional Information:||Copyright 2011 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Keywords:||Displays;large-area electronics;switches;thin– film transistors (TFTs).|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)|
|Date Deposited:||23 Dec 2011 05:19|
|Last Modified:||23 Dec 2011 05:19|
Actions (login required)