Bhattacharyya, S and Bharadwaja, SSN and Krupanidhi, SB (1999) Growth and characterization of SrBi2Nb2O9 thin films by pulsed-laser ablation. In: Applied Physics Letters, 75 (17). pp. 2656-2658.
Growth_and_characterization.pdf - Published Version
Restricted to Registered users only
Download (650Kb) | Request a copy
Polycrystalline films of SrBi2Nb2O9 were grown using pulsed-laser ablation. The ferroelectric properties were achieved by low-temperature deposition followed by a subsequent annealing process. The lower switching voltage was obtained by lowering the thickness, which did not affect the insulating nature of the films. The hysteresis results showed an excellent square-shaped loop with results (Pr = 6 μC/cm2, Ec = 100 kV/cm) in good agreement with earlier reports. The films also exhibited a dielectric constant of 250 and a dissipation factor of 0.02. The transport studies indicated an ohmic behavior, while higher voltages induced a bulk space charge.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Institute of Physics.|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre|
|Date Deposited:||26 Dec 2011 06:57|
|Last Modified:||26 Dec 2011 06:57|
Actions (login required)