Dixit, VK and Bansal, Bhavtosh and Venkataraman, V and Bhat, HL and Subbanna, GN (2002) Structural, optical, and electrical properties of bulk single crystals of InAsxSb(1-x) grown by rotatory Bridgman method. In: Applied Physics Letters, 81 (9). pp. 1630-1632.
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Radially-homogeneous and single-phase InAsxSb(1−x) crystals, up to 5.0 at. % As concentration, have been grown using the rotatory Bridgman method. Single crystallinity has been confirmed by x-ray and electron diffraction studies. Infrared transmission spectra show a continuous decrease in optical energy gap with the increase of arsenic content in InSb. The measured values of mobility and carrier density at room temperature (for x = .05) are 5.6×104 cm2/V s and 2.04×1016 cm−3, respectively.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Institute of Physics.|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre
Division of Physical & Mathematical Sciences > Physics
|Date Deposited:||26 Dec 2011 06:42|
|Last Modified:||26 Dec 2011 06:42|
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