ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Electron paramagnetic resonance study of porous silicon

Bhat, SV and Victor, D and Muthu, S and Sood, AK and Jayaram, K (1992) Electron paramagnetic resonance study of porous silicon. In: Applied Physics Letters, 60 (17). pp. 2116-2117.

[img] PDF
Electron_paramagnetic.pdf - Published Version
Restricted to Registered users only

Download (839Kb) | Request a copy
Official URL: http://apl.aip.org/resource/1/applab/v60/i17/p2116...

Abstract

Electron paramagnetic resonance studies under ambient conditions of boron‐doped porous silicon show anisotropic Zeeman (g) and hyperfine (A) tensors, signaling localization of the charge carriers due to quantum confinement.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 27 Dec 2011 07:36
Last Modified: 27 Dec 2011 07:36
URI: http://eprints.iisc.ernet.in/id/eprint/42908

Actions (login required)

View Item View Item