Dhananjay, * and Krupanidhi, SB (2006) Dielectric properties of c-axis oriented Zn1-xMgxO thin films grown by multimagnetron sputtering. In: Applied Physics Letters, 89 (8). 082905-082905.
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Zn1−xMgxO (x = 0.3) thin films have been fabricated on Pt/TiO2/SiO2/Si substrates using multimagnetron sputtering technique. The films with wurtzite structure showed a (002) preferred orientation. Ferroelectricity in Zn1−xMgxO films was established from the temperature dependent dielectric constant and the polarization hysteresis loop. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at 110 °C. The resistivity versus temperature characteristics showed an anomalous increase in the vicinity of the dielectric transition temperature. The Zn1−xMgxO thin films exhibit well-defined polarization hysteresis loop, with a remanent polarization of 0.2 μC/cm2 and coercive field of 8 kV/cm at room temperature.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Institute of Physics.|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre
Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
|Date Deposited:||27 Feb 2012 11:16|
|Last Modified:||27 Feb 2012 11:16|
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