Singh, MP and Shalini, K and Shivashankar, SA and Deepak, GC and Bhat, N (2006) Structural and electrical properties of low pressure metalorganic chemical vapor deposition grown Eu2O3 films on Si(100). In: Applied Physics Letters, 89 (20). 201901 -201901.
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Structural and electrical properties of Eu2O3 films grown on Si(100) in 500–600 °C temperature range by low pressure metalorganic chemical vapor deposition are reported. As-grown films also possess the impurity Eu1−xO phase, which has been removed upon annealing in O2 ambient. Film’s morphology comprises uniform spherical mounds (40–60 nm). Electrical properties of the films, as examined by capacitance-voltage measurements, exhibit fixed oxide charges in the range of −1.5×1011 to −6.0×1010 cm−2 and dielectric constant in the range of 8–23. Annealing has resulted in drastic improvement of their electrical properties. Effect of oxygen nonstoichiometry on the film’s property is briefly discussed.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Institute of Physics.|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre
Division of Electrical Sciences > Electrical Communication Engineering
|Date Deposited:||27 Feb 2012 11:07|
|Last Modified:||27 Feb 2012 11:07|
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