Viswanatha, KV and Satyam, M (1977) Characteristics of j.f.e.t.s. taking the separation of gate electrode from the source and drain electrodes into account. In: Proceedings of the Institution of Electrical Engineers, 124 (6). p. 525.Full text not available from this repository. (Request a copy)
The performance characteristics of a junction field-effect transistor (j.f.e.t.) are evaluated considering the presence of the gap between the gate electrode and the source and drain terminals. It is concluded that the effect of the gap is to demand a higher drain voltage to maintain the same drain current. So long as the device is operated at the same drain current, the presence of the gap does not change the performance of the device as an amplifier. The nature of the performance of the device as a variable resistor is not affected by the gap if it is less than or equal to the physical height of the channel. For gap lengths larger than the channel height, the effect of the gap is to add a series resistance in the drain.
|Item Type:||Journal Article|
|Keywords:||gate electrode;source;drain electrodes;performance characteristics;drain voltage;drain current;gap lengths; junction gate FET|
|Date Deposited:||27 Feb 2012 09:39|
|Last Modified:||27 Feb 2012 09:39|
Actions (login required)