Kumar, Rakesh R and Rao, Narasimha K and Phani, AR (2012) Growth of silicon nanowires by electron beam evaporation using indium catalyst. In: Materials Letters, 66 (1). pp. 110-112.
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For the first time silicon nanowires have been grown on indium (In) coated Si (100) substrates using e-beam evaporation at a low substrate temperature of 300 degrees C. Standard spectroscopic and microscopic techniques have been employed for the structural, morphological and compositional properties of as grown Si nanowires. The as grown Si nanowires have randomly oriented with an average length of 600 nm for a deposition time of 15 min. As grown Si nanowires have shown indium nanoparticle (capped) on top of it confirming the Vapor Liquid Solid (VLS) growth mechanism. Transmission Electron Microscope (TEM) measurements have revealed pure and single crystalline nature of Si nanowires. The obtained results have indicated good progress towards finding alternative catalyst to gold for the synthesis of Si nanowires. (C) 2011 Elsevier B.V. All rights reserved.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science B.V.|
|Keywords:||Semiconductors;Si nanowires;Electron beam evaporation;VLS growth mechanism;In catalyst;Thin films|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)|
|Date Deposited:||24 Jan 2012 12:00|
|Last Modified:||24 Jan 2012 12:00|
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