Das, Gupta K and Soman, SS and Chandrasekhar, N (2002) Atomic layer deposition of ZrO2 thin films: Study of growth kinetics and dielectric behaviour. In: International Symposium on Rapid Thermal and Other Short-Time Processing Technologies III, MAY 13-16, 2002, PHILADELPHIA, PENNSYLVANIA.Full text not available from this repository.
Thin films of ZrO2 have been deposited by ALD on Si(100) and SIMOX using two different metalorganic complexes of Zr as precursors. These films are characterized by X-ray diffraction, transmission and scanning electron microscopies, infrared spectroscopy, and electrical measurements. These show that amorphous ZrO2 films of high dielectric quality may be grown on Si(100) starting about 400degreesC. As the growth temperature is raised, the films become crystalline, the phase formed and the microstructure depending on precursor molecular structure. The phase of ZrO2 formed depends also on the relative duration of the precursor and oxygen pulses. XPS and IR spectroscopy show that films grown at low temperatures contain chemically unbound carbon, its extent depending on the precursor. C-V measurements show that films grown on Si(100) have low interface state density, low leakage current, a hysteresis width of only 10-250 mV and a dielectric constant of similar to16-25.
|Item Type:||Conference Proceedings|
|Additional Information:||Copyright of this article belongs to Elsevier Science B.V.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||16 Mar 2012 12:19|
|Last Modified:||16 Mar 2012 12:19|
Actions (login required)