Bansal, Bhavtosh and Venkataraman, V and Bhat, HL and Dixit, VK (2004) Transport, optical and magnetotransport properties of hetero-epitaxial InAsxSb1−x/GaAs(x0.06) and bulk View the MathML source crystals: experiment and theoretical analysis. In: Proceedings of the 11th International Conference on Narrow Gap Semiconductors, JUN 16-20, 2003, Buffalo, New York.
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We briefly review the growth and structural properties of View the MathML source bulk single crystals and View the MathML source epitaxial films grown on semi-insulating GaAs substrates. Temperature-dependent transport measurements on these samples are then correlated with the information obtained from structural (XRD, TEM, SEM) and optical (FTIR absorption) investigations. The temperature dependence of mobility and the Hall coefficient are theoretically modelled by exactly solving the linearized Boltzmann transport equation by inversion of the collision matrix and the relative role of various scattering mechanisms in limiting the low temperature and View the MathML source mobility is estimated. Finally, the first observation of Shubnikov oscillations in InAsSb is discussed.
|Item Type:||Conference Paper|
|Additional Information:||Copyright of this article belongs to Elsevier Science.|
|Keywords:||InAsSb;InSb;Narrow gap semiconductors;Magnetotransport;Hall mobility;Boltzmann equation|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||08 Mar 2012 10:05|
|Last Modified:||08 Mar 2012 10:05|
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