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Studies on zirconium nitride films deposited by reactive magnetron sputtering

Bhuvaneswari, HB and Priya, Nithiya I and Chandramani, R and Reddy, Rajagopal V and Rao, Mohan G (2003) Studies on zirconium nitride films deposited by reactive magnetron sputtering. In: Crystal Research and Technology, 38 (12). pp. 1047-1051.

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This paper deals with the preparation of Zirconium Nitride films by DC reactive magnetron sputtering. Films were deposited on silicon substrates at room temperature. Nitrogen partial pressure was varied from $4 \times 10^{-5} to 10 \times 10^{-5}$ m bar and the effect on the structural, electrical, optical properties of the films was systematically studied. The films formed at a nitrogen pressure of $6 \times 10^{-5}$ mbar showed low electrical resistivity of $1.726 \times 10^{-3} \Omega . cm.$ The deposited films were found to be crystalline with refractive index and extinction coefficient 1.95 and 0.4352 respectively.

Item Type: Journal Article
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Additional Information: The copyright belongs to WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Keywords: zirconium nitride;silicon thin films;dc reactive magnetron sputtering;optical constants;electrical resistivity
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Date Deposited: 14 Dec 2005
Last Modified: 27 Aug 2008 11:37
URI: http://eprints.iisc.ernet.in/id/eprint/4383

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