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Effect of bismuth doping in GeSe and GeSeTe glasses by photoluminescence spectroscopy

Rao, KSRK and Kumar, A and Gopal, ESR and Sangunni, KS and Asha, * (1998) Effect of bismuth doping in GeSe and GeSeTe glasses by photoluminescence spectroscopy. [Book Chapter]

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Abstract

Semiconducting chalcogenide glasses in the systems GeSe and GeSeTe with the addition of bismuth show unusual phenomena of p - to - n transition. Samples for characterization were prepared in bulk form by melt-quenching technique, with increasing Bi at. % to replace selenium. Photoluminescence (PL) spectroscopic studies on all the samples were carried out at 4.2K using an Ar-Ion laser for illuminating the samples. The laser power used was 200mw. Both the systems show a decrease in the intensity of PL signal with increasing Bi content. This interesting behavior is discussed on the basis of a charged defect model for chalcogenide glasses, proposed by Mott, Davis and Street (MDS). The effect of bismuth addition on these charged defects is also discussed to explain the carrier type reversal.

Item Type: Book Chapter
Additional Information: Copyright of this article belongs to Universities Press india Ltd.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 16 Mar 2012 09:50
Last Modified: 16 Mar 2012 09:52
URI: http://eprints.iisc.ernet.in/id/eprint/43890

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