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Growth of InSb(1-x)Bix crystals by Rotatary Bridgman method and their characterization

Dixit, VK and Rodrigues, BV and Bhat, HL (2000) Growth of InSb(1-x)Bix crystals by Rotatary Bridgman method and their characterization. In: 10th International Workshop on the Physics of Semiconductor Devices (IWPSD 99), DEC 14-18, 1999, New Delhi, India.

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Abstract

The Rotatary Bridgman method was used to grow ternary InSb(1-x)SBix, crystals. In this method the ampoule was subjected to reversible rotation at a rate of 60rpm. High quality crystals of 8mm diameter and 25mm length were grown with 6.5 atomic percentage of Bi. The grown crystals were characterized employing various techniques such as energy dispersive spectroscopy, x-ray diffraction, differential scanning calorimetery, infrared spectroscopy and Hall measurement.

Item Type: Conference Paper
Additional Information: Copyright of this article belongs to Spie-Int Society Optical Engineering.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 12 Apr 2012 08:00
Last Modified: 12 Apr 2012 08:00
URI: http://eprints.iisc.ernet.in/id/eprint/43894

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