ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Effect of scaling on the non-quasi-static behaviour of the MOSFET for RF ICs

Srinivasan, R and Bhat, N (2003) Effect of scaling on the non-quasi-static behaviour of the MOSFET for RF ICs. In: Proceedings of the 16th International Conference on VLSI Design (VLSI’03), 4-8 Jan. 2003, New Delhi, India.

[img] PDF
Effect_of_Scaling.pdf - Published Version
Restricted to Registered users only

Download (606Kb) | Request a copy
Official URL: http://ieeexplore.ieee.org/search/srchabstract.jsp...

Abstract

The effect of scaling (1 μm to 0.09 μm) on the non-quasi-static (NQS) behaviour of the MOSFET has been studied using process and device simulation. It is shown that under fixed gate (Vgs) and drain (Vds) bias voltages, the NQS transition frequency (fNQS) scales as 1/Leff rather than 1/L2eff due to the velocity saturation effect. However, under the practical scaling guidelines, considering the scaling of supply voltage as well, fNQS shows a turn around effect at the sub 100 nm regime. The relation between unity gain frequency (ft) and fNQS is also evaluated and it is shown that ft and fNQS have similar trends with scaling.

Item Type: Conference Paper
Additional Information: Copyright 2003 IEEE. Personal use of this material is permitted.However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited: 16 Mar 2012 09:21
Last Modified: 16 Mar 2012 09:21
URI: http://eprints.iisc.ernet.in/id/eprint/43987

Actions (login required)

View Item View Item