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Transport through an electrostatically defined quantum dot lattice in a two-dimensional electron gas

Goswami, Srijit and Aamir, MA and Siegert, Christoph and Pepper, Michael and Farrer, Ian and Ritchie, David A and Ghosh, Arindam (2012) Transport through an electrostatically defined quantum dot lattice in a two-dimensional electron gas. In: Physical Review B: Condensed Matter and Materials Physics, 85 (7). 075427-1-075427-5.

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Official URL: http://prb.aps.org/abstract/PRB/v85/i7/e075427

Abstract

Quantum dot lattices (QDLs) have the potential to allow for the tailoring of optical, magnetic, and electronic properties of a user-defined artificial solid. We use a dual gated device structure to controllably tune the potential landscape in a GaAs/AlGaAs two-dimensional electron gas, thereby enabling the formation of a periodic QDL. The current-voltage characteristics, I (V), follow a power law, as expected for a QDL. In addition, a systematic study of the scaling behavior of I (V) allows us to probe the effects of background disorder on transport through the QDL. Our results are particularly important for semiconductor-based QDL architectures which aim to probe collective phenomena.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to American Physical Society.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 22 Mar 2012 04:59
Last Modified: 22 Mar 2012 04:59
URI: http://eprints.iisc.ernet.in/id/eprint/44016

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