Goswami, Srijit and Aamir, MA and Siegert, Christoph and Pepper, Michael and Farrer, Ian and Ritchie, David A and Ghosh, Arindam (2012) Transport through an electrostatically defined quantum dot lattice in a two-dimensional electron gas. In: Physical Review B: Condensed Matter and Materials Physics, 85 (7). 075427-1-075427-5.
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Quantum dot lattices (QDLs) have the potential to allow for the tailoring of optical, magnetic, and electronic properties of a user-defined artificial solid. We use a dual gated device structure to controllably tune the potential landscape in a GaAs/AlGaAs two-dimensional electron gas, thereby enabling the formation of a periodic QDL. The current-voltage characteristics, I (V), follow a power law, as expected for a QDL. In addition, a systematic study of the scaling behavior of I (V) allows us to probe the effects of background disorder on transport through the QDL. Our results are particularly important for semiconductor-based QDL architectures which aim to probe collective phenomena.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Physical Society.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||22 Mar 2012 04:59|
|Last Modified:||22 Mar 2012 04:59|
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