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Raman signatures of pressure induced electronic topological and structural transitions in Bi2Te3

Pradhan, Gopal K and Bera, Achintya and Kumar, Pradeep and Muthu, DVS and Sood, AK (2012) Raman signatures of pressure induced electronic topological and structural transitions in Bi2Te3. In: Solid State Communications, 152 (4). pp. 284-287.

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Official URL: http://dx.doi.org/10.1016/j.ssc.2011.11.029

Abstract

We report Raman signatures of electronic topological transition (ETT) at 3.6 GPa and rhombohedral (alpha-Bi2Te3) to monoclinic (beta-Bi2Te3) structural transition at similar to 8 GPa. At the onset of ETT, a new Raman mode appears near 107 cm(-1) which is dispersionless with pressure. The structural transition at similar to 8 GPa is marked by a change in pressure derivative of A(1g) and E-g mode frequencies as well as by appearance of new modes near 115 cm(-1) and 135 cm(-1). The mode Grilneisen parameters are determined in both the alpha and beta-phases. (C) 2011 Elsevier Ltd. All rights reserved.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Bi2Te3;High pressure Raman;Electronic topological transition
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 22 Mar 2012 05:04
Last Modified: 22 Mar 2012 05:04
URI: http://eprints.iisc.ernet.in/id/eprint/44024

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