Pradhan, Gopal K and Bera, Achintya and Kumar, Pradeep and Muthu, DVS and Sood, AK (2012) Raman signatures of pressure induced electronic topological and structural transitions in Bi2Te3. In: Solid State Communications, 152 (4). pp. 284-287.
Raman_signatures.pdf - Published Version
Restricted to Registered users only
Download (473Kb) | Request a copy
We report Raman signatures of electronic topological transition (ETT) at 3.6 GPa and rhombohedral (alpha-Bi2Te3) to monoclinic (beta-Bi2Te3) structural transition at similar to 8 GPa. At the onset of ETT, a new Raman mode appears near 107 cm(-1) which is dispersionless with pressure. The structural transition at similar to 8 GPa is marked by a change in pressure derivative of A(1g) and E-g mode frequencies as well as by appearance of new modes near 115 cm(-1) and 135 cm(-1). The mode Grilneisen parameters are determined in both the alpha and beta-phases. (C) 2011 Elsevier Ltd. All rights reserved.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science.|
|Keywords:||Bi2Te3;High pressure Raman;Electronic topological transition|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||22 Mar 2012 05:04|
|Last Modified:||22 Mar 2012 05:04|
Actions (login required)