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Modeling of room temperature current-voltage measurements on homo-junction HgCdTe diodes exhibiting nonequilibrium effects

Srivastav, Vanya and Pal, R and Venkataraman, V (2012) Modeling of room temperature current-voltage measurements on homo-junction HgCdTe diodes exhibiting nonequilibrium effects. In: Journal of Applied Physics, 111 (3).

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Abstract

HgCdTe mid wave infrared (MWIR) n(+)/nu/p(+) homo-junction photodiodes with planar architecture are designed, fabricated, and measured at room temperature. An improved analytical I-V model is reported by incorporating trap assisted tunneling and electric field enhanced Shockley-Read-Hall generation recombination process due to dislocations. Tunneling currents are fitted before and after the Auger suppression of carriers with energy level of trap (E-t), trap density (N-t), and the doping concentrations of n(+) and nu regions as fitting parameters. Values of E-t and N-t are determined as 0.79 E-g and similar to 9 x 10(14) cm(-3), respectively, in all cases. Doping concentration of nu region was found to exhibit nonequilibrium depletion from a value of 2 x 10(16) to 4 x 10(15) cm(-3) for n(+) doping of 2 x 10(17) cm(-3). Pronounced negative differential resistance is observed in the homo-junction HgCdTe diodes. (C) 2012 American Institute of Physics. [doi:10.1063/1.3682483]

Item Type: Journal Article
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 13 Apr 2012 08:48
Last Modified: 13 Apr 2012 08:48
URI: http://eprints.iisc.ernet.in/id/eprint/44269

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